TWISTPVSK · Moiré Patterns in Twisted Heterostructures of Ultrathin Metal Halide Perovskite Nanosheets

The moir patterns in the twisted heterostructures of the layered semiconductors such as graphene, transition metal dichalcogenides, h-BN, etc. have led to the emergence of novel exciting properties such as superconductivity, ferroelectricity, enhanced charge transfer at the interface of heterostructures, etc. Despite being a highly desirable phenomenon in the vertical heterostructures of the layered materials, moir patterns are yet to be explored in the metal halide perovskites. The 2D layered and 3D metal halide perovskites have become one of the most explored classes of semiconductor materials owing to their excellent optoelectronic properties. The TWISTPVSK project aims to generate twisted heterostructures using ultrathin nanosheets of 2D layered perovskites and ultrathin nanosheets of 3D perovskites. The primary goal is to leverage the enhanced optoelectronic properties resulting from moir patterns for photodetection applications and establish the role of moir patterns in the generation of new properties in 2D and 3D metal halide perovskites. The key objectives of this proposal are to: i) synthesize twisted heterostructures of ultrathin nanosheets of 2D layered perovskites, study the moir exciton dynamics using ultrafast spectroscopy, and explore the effect of twisting angle on photodetection efficiency; ii) chemically convert ultrathin 2D layered perovskites into 3D MA-based perovskite nanosheets, create twisted heterostructures of 3D perovskites, investigate moire exciton dynamics, and fabricate photodetectors based on these heterostructures. TWISTPVSK is at the crossroads of chemistry, physics, and engineering; therefore, it will attract significant attention from different disciplines, offer fresh insights into the behavior of metal halide perovskites, and contribute to the development of next generation technologies.