SEINE · 2-Dimensional Graphene/MoS2 HeteroStructures as AnodE Compartment of SodIum IoN BattEries

Lithium-ion batteries have been known as the main solution to the global demand for energy storage devices. However, the rising cost and limited availability of Li have hindered the further development of these batteries. Hence, the research paradigm has shifted to develop earth-abundant elements-based rechargeable batteries among which, sodium-ion batteries (SIBs) show promising potential.The main challenge in developing SIBs is to prepare anode material with high capacity and long cycle life. The low cost, versatile synthesis methods, and ample interlayer distance of MoS2 (MS) have attracted researchers to investigate the possibility of using it as the anode section of SIBs. SEINE aims to develop two-dimensional-heterostructures using derivatives of MS and graphene (Gr). While the presence of single-layer Gr with low defect density beneath MS enhances the electrical conductivity compared to pure MS, the formation of dopants and defects on N-doped MS and N-doped Gr (a) forms active sites for Na+ adsorption, (b) modifies the interlayer interactions, (c) affects the Solid-Electrolyte Interface evolution mechanism, and (d) promotes the stability of the anode. Each of these effects will be investigated in depth using different physical and electrochemical characterization methods.We believe that SEINEs outcomes will pave the way to answer fundamental questions regarding the mechanisms which affect the performance of SIBs and hence to develop cost-effective, durable, and high-capacity batteries. Thanks to the experiences obtained in this fellowship, Navid Solati Eskandar will be trained as a scientist with a broad interdisciplinary perspective and expertise in different electrochemical applications. Different steps and tasks of SEINE will be performed via collaboration between Navid and Prof. C. Laberty-Robert at Sorbonne University, Prof. Sarp Kaya at Ko University, and Prof. Ovidiu Ersen at the University of Strasbourg.