OTMRAM · Energy-efficient magnetic memory driven by orbital current

The OTMRAM project aims to develop a new generation of magnetic memory devices by exploiting orbital currents as an alternative to spin currents for magnetization control. The overarching objective is to design and demonstrate an all-orbital magnetic random-access memory (MRAM) cell that achieves ultra-low power consumption and high performance. This will be accomplished through three interconnected work packages: (i) identifying and optimizing novel materials with high orbital Hall conductivity and orbital-dominant magnetic properties to maximize orbital torque efficiency; (ii) investigating coherent and incoherent tunnelling of orbital currents across insulating barriers to establish efficient readout mechanisms; and (iii) integrating these insights into a prototype MRAM device that demonstrates orbital-driven writing and orbital-based tunnelling readout. By replacing spin currents with orbital currents for both writing and reading, the project aims to overcome the limitations of existing SOT-MRAM, achieving significant gains in energy efficiency and scalability. OTMRAM will thus provide an effective alternative pathway for next-generation memory and logic technologies, contributing to the increasing global demand for sustainable, low-power data storage solutions.