MoWSeS · Nanoelectronics based on two-dimensional dichalcogenides

Semiconductor industry rapidly approaches the performance limits of silicon-based CMOS technology. This proposal aims to pave the wayto electronic circuits based on two-dimensional transition metal dichalcogenides (TMDs), newly emerging semiconducting analogues ofgraphene. TMDs can be rapidly exfoliated in the liquid phase into single layers starting from powders and provide solutions of 2D materialsthat can be coated over large areas. The recently achieved transistors based on single-layer MoS2 indicate a mobility comparable or evenhigher than silicon thin films or graphene nanoribbons, but with much lower leakage currents. In a joint effort of wet and gas phasechemistry and deposition techniques, nanoanalytics, electronic and optical spectroscopy, electronic device fabrication and characterisation,and theoretical modeling we aim to control the production and deposition of TMD nanolayers and nanoribbons, understand and control theinterplay between morphology, defects and electrical properties, understand electrical transport through semiconducting nanolayers, andfabricate nanodevices. By combining the ease of processing commonly associated with organic electronics with superior electricalproperties, we will demonstrate a new type of low-power, low-cost field effect transistor based on a single TMD layer and/or nanoribbon.The proposed outcomes of immediate interest for the three full partners from industry are (i) process flows and practices that enablefabrication of nanoscale transistor arrays for application in flexible electronics via spraying and/or ink-jet printing, (ii) software packages formodeling the electronic behavior of TMD nanolayers, and (iii) a prototype reactor for their large-scale growth and deposition. The trainingand dissemination activities will be complemented by an associated partner who will produce educational videos together with the youngresearchers of the consortium.