INTERFAST · Gated INTERfaces for FAST information processing

INTERFAST will develop a novel technological platform for the voltage control of interfacial magnetism. The key idea is to manipulate, via a gate, the hybrid states at the interface between a magnetic material and an organic layer, in a way to affect the effective spin-orbit coupling at such interface. This will allow us to actively control the interfacial magnetism of a wide range of magnetic and supporting compounds, thus providing a universal platform, which is not specific of the rare magnets having massive voltage-control magneto-crystalline anisotropy coefficients. INTERFAST will demonstrate the applicability of this technology to a range of key spintronic functions, encompassing voltage control of magnetisation reversal at fJ/bit energy cost, drastic reduction of the spin-orbit-torque switching currents, and ultrafast THz information processing in all-metallic spintronic devices aided by gateable hybridisation unit.