e-See · Single electron detection in Transmission Electron Microscopy

The ultimate goal of device miniaturization is to rely on a single charge provided by a single dopant atom: solotronics.Currently the gate length in a transistor cannot be reduced beyond 10-12 nm, as variability between nominally identicaldevices reaches unacceptable levels. Elaborate quantum transport experiments can monitor the presence and spin state ofa single charge, but do not provide information about location and distribution (wavefunction) of the charge or the localchemical and crystallographic environment. The latter, however, determine why the charge is present at a specific locationwith a particular distribution. Scanning probe techniques can measure charges but are restricted to the near surface region.In contrast, the phase of an electron in transmission electron microscopy (TEM) can probe the sample volume and issensitive to charge. The target of the e-See project is the first real time observation of the wavefunction associated to asingle electron charge in the volume of a device with atomic resolution. I aim to implement low temperature quantumtransport experiments in a TEM to allow simultaneous electrical manipulation of this charge. Combined visualization andmanipulation of a single charge trapped by Coulomb blockade in a transistor will (i) identify the origins of device variability,and (ii) show how the local properties of the sample affect localization of a single charge and its wavefunction. The projectimpact involves understanding of variability, improving device design and creation of a new research field on lowtemperature electrical in situ TEM experiments. It will provide the tool to visualize a single charge wavefunction in anydevice, enabling ultimate device engineering: deterministic 3D atomic scale control of the position of charge localization. Tothis end, I will use electron holography and scanning TEM, develop a low temperature electrical TEM sample holder, andnovel sample preparation.