ALD4PV · ATOMIC LAYER DEPOSITION OF METAL OXIDES FOR PHOTOVOLTAIC SOLAR CELLS

The proposal lies within the field of RENEWABLE ENERGY and aims to assist in achieving the EU climate and energy goals. Photovoltaics (PV) will have a significant impact on the energy market when the energy conversion efficiency of solar cells is enhanced. Most types of PV cells employ functional thin films and cell efficiency can be improved tailoring the properties of such films. Major challenges are to enhance photon absorption, reduce electron-hole recombination and improve charge transport.Atomic layer deposition (ALD) is an ultrathin-layer deposition technique well known for its excellent uniformity, conformability and composition control. Recently, this method has proven promising for PV through excellent surface passivation of crystalline Si cells by Al2O3. The full potential of ALD for PV cell manufacturing is yet to be exploited. This is why this project will explore the use of ALD-synthesized oxide films, in particular Zn-based and related oxides (In2O3, SnO2), for different types of solar cells. These films will be used as specific layers, such as tunnel layer in 1st generation crystalline Si cells